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The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers

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Abstract

Luminescent Si nanocrystals formed in SiO2 layers were irradiated with electrons and He+ ions with energies of 400 and 25–130 keV, respectively. The effects of irradiation and subsequent annealing at 600–1000°C were studied by the methods of photoluminescence and electron microscopy. After irradiation with low doses (∼1 displacement per nanocrystal), it was found that photoluminescence of nanocrystals was quenched but the number of them increased simultaneously. After irradiation with high doses (∼103 displacements per nanocrystal), amorphization was observed, which is not characteristic of bulk Si. The observed phenomena are explained in terms of the generation of point defects and their trapping by Si-SiO2 interfaces. Photoluminescence of nanocrystals is recovered at annealing temperatures below 800°C; however, an annealing temperature of about 1000°C is required to crystallize the precipitates. An enhancement of photoluminescence observed after annealing is explained by the fact that the intensities of photoluminescence originated from initial nanocrystals and from nanocrystals formed as a result irradiation are summed.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    G. A. Kachurin, S. G. Yanovskaya, A. K. Gutakovskii & K. S. Zhuravlev

  2. CSNSM-CNRS/IN2P3, 91405, Orsay, France

    M. -O. Ruault, O. Kaitasov & H. Bernas

Authors
  1. G. A. Kachurin
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  2. S. G. Yanovskaya
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  3. M. -O. Ruault
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  4. A. K. Gutakovskii
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  5. K. S. Zhuravlev
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  6. O. Kaitasov
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  7. H. Bernas
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 8, 2000, pp. 1004–1009.

Original Russian Text Copyright © 2000 by Kachurin, Yanovskaya, Ruault, Gutakovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Zhuravlev, Kaitasov, Bernas.

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Kachurin, G.A., Yanovskaya, S.G., Ruault, M.O. et al. The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers. Semiconductors 34, 965–970 (2000). https://doi.org/10.1134/1.1188109

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  • DOI: https://doi.org/10.1134/1.1188109

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