Abstract
Transmission electron microscopy was used to study the microstructure of GaN films undoped or Si-doped to 1017 or 1018 cm−3 and grown by molecular-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer layer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed. Smoothing of the steplike morphology of the GaN film surface occurs at a Si concentration of 1017 cm−3.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 8, 2000, pp. 903–908.
Original Russian Text Copyright © 2000 by Cherkashin, Bert, Musikhin, Novikov, Cheng, Foxon.
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Cherkashin, N.A., Bert, N.A., Musikhin, Y.G. et al. TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate. Semiconductors 34, 867–871 (2000). https://doi.org/10.1134/1.1188090
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DOI: https://doi.org/10.1134/1.1188090