Abstract
MOCVD-grown heterostructures with one or several InxGa1−x N layers in a GaN matrix have been studied by transmission electron microscopy. In heterostructures with thick InGaN layers, a noncoherent system of domains with lateral dimensions (∼50 nm) on the order of the layer thickness (∼40 nm) is formed. In the case of ultrathin InGaN inclusions, nanodomains coherent with the GaN matrix are formed. The content of indium in nanodomains, determined by the DALI method, is as high as x≈0.6 or more, substantially exceeding the average In concentration. The density of the nanodomains formed in the structures studied is n≈(2–5)×1011 cm−2. In the structures with ultrathin InGaN inclusions, two characteristic nanodomain sizes are observed (3–6 and 8–15 nm).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 6, 2000, pp. 647–651.
Original Russian Text Copyright © 2000 by Soshnikov, Lundin, Usikov, Kalmykova, Ledentsov, Rosenauer, Neubauer, Gerthsen.
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Soshnikov, I.P., Lundin, V.V., Usikov, A.S. et al. Specifics of MOCVD formation of InxGa1−x N inclusions in a GaN matrix. Semiconductors 34, 621–625 (2000). https://doi.org/10.1134/1.1188041
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DOI: https://doi.org/10.1134/1.1188041