Abstract
It is shown that the Fourier transform of the negative magnetoresistance associated with the interference correction to the conductivity contains information about the distribution function of the closed trajectories with respect to their areas and about the dependence of the length of the closed trajectories on their area \(\bar L(S)\). On the basis of this result a method is proposed for analyzing the negative magnetoresistance. It is used to process experimental results in a twodimensional structure with a doped barrier. It is shown that the function \(\bar L(S)\) in the investigated structure is largely determined by the scattering anisotropy.
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Fiz. Tekh. Poluprovodn. 33, 986–989 (August 1999)
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Min’kov, G.M., Negashev, S.A., Rut, O.É. et al. New approach to the analysis of negative magnetostriction in two-dimensional structures. Semiconductors 33, 898–900 (1999). https://doi.org/10.1134/1.1187920
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DOI: https://doi.org/10.1134/1.1187920