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Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host

  • The Physics of Semiconductor Devices
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Abstract

The optical properties of structures with InAs islands and narrow GaAs quantum wells in an AlGaAs host have been investigated. The InAs islands were formed by depositing a layer of InAs with an effective thickness less than one monolayer. The effect of an exciton waveguide and the onset of lasing due to optical pumping in the red spectral range are demonstrated in structures without external optical confinement by layers with a lower refractive index.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. F. Tsatsul’nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop’ev & Zh. I. Alfërov

  2. Institute of Physics, St. Petersburg State University, 198904, St. Petersburg, Russia

    I. É. Kozin & M. V. Belousov

  3. Institut für Festkörperphysik, Technische Universität Berlin, D-10623, Berlin, Germany

    D. Bimberg

Authors
  1. A. F. Tsatsul’nikov
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  2. B. V. Volovik
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  3. N. N. Ledentsov
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  4. M. V. Maksimov
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  5. A. Yu. Egorov
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  6. A. R. Kovsh
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  7. V. M. Ustinov
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  8. A. E. Zhukov
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  9. P. S. Kop’ev
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  10. Zh. I. Alfërov
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  11. I. É. Kozin
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  12. M. V. Belousov
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  13. D. Bimberg
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Additional information

Fiz. Tekh. Poluprovodn. 33, 488–491 (April 1999)

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Tsatsul’nikov, A.F., Volovik, B.V., Ledentsov, N.N. et al. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host. Semiconductors 33, 467–470 (1999). https://doi.org/10.1134/1.1187713

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  • DOI: https://doi.org/10.1134/1.1187713

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