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Solid solution InxGa1−x AsySbzP1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy

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Abstract

The diagrams of melt-solid solution (fusibility curves) and solid solution (I)-solid solution (II) (surfaces of spinodal decomposition of solid solutions) phase equilibria in the five-component system In-Ga-As-Sb-P (the solid solutions are isoperiodic to the GaSb and InAs substrates) are calculated. The concentration ranges of the isovalent substitution solid solutions InxGa1−x AsySbzP1−y−z , which are accessible for synthesis by liquid-phase epitaxy, are calculated.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    N. A. Charykov, A. M. Litvak, M. P. Mikhailova, K. D. Moiseev & Yu. P. Yakovlev

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  1. N. A. Charykov
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  2. A. M. Litvak
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  3. M. P. Mikhailova
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  4. K. D. Moiseev
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  5. Yu. P. Yakovlev
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Fiz. Tekh. Poluprovodn. 31, 410–415 (April 1997)

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Charykov, N.A., Litvak, A.M., Mikhailova, M.P. et al. Solid solution InxGa1−x AsySbzP1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy. Semiconductors 31, 344–349 (1997). https://doi.org/10.1134/1.1187160

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  • DOI: https://doi.org/10.1134/1.1187160

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