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Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon

  • Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.)
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Abstract

The influence of the internal gettering process on the large-scale defects in Czochralski-grown boron-doped single-crystal silicon is investigated by low-angle mid-infrared light scattering. The large-scale defects in the as-grown material and crystals subjected to the internal gettering procedure are classified. The applicability of low-angle light scattering in laboratory investigations and in the industrial inspection of the operations in an internal gettering production cycle is demonstrated.

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Authors and Affiliations

  1. Institute of General Physics, Russian Academy of Sciences, 117942, Moscow, Russia

    V. P. Kalinushkin, A. N. Buzynin, D. I. Murin, V. A. Yuryev & O. V. Astaf’ev

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  1. V. P. Kalinushkin
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  2. A. N. Buzynin
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  3. D. I. Murin
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  4. V. A. Yuryev
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  5. O. V. Astaf’ev
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Additional information

Fiz. Tekh. Poluprovodn. 31, 1158–1163 (October 1997)

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Kalinushkin, V.P., Buzynin, A.N., Murin, D.I. et al. Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon. Semiconductors 31, 994–998 (1997). https://doi.org/10.1134/1.1187034

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  • DOI: https://doi.org/10.1134/1.1187034

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