Abstract
The magnetic-field and strain dependences of the photoelectric, photomagnetic, and photothermomagnetic characteristics are determined for the gapless semiconductor CdxHg1−x Te (x=0.04–0.16), in which an energy gap is opened by external effects. In excitation by infrared radiation the photosignal is observed to increase sharply with an increase in the applied magnetic field or uniaxial elastic deformation. For radiation in the millimeter spectral range the photoresponse exhibits giant oscillations associated with the variation of the electron density. This phenomenon is confirmed by the field dependence of the photomagnetic Hall effect. It is shown that the photothermomagnetic effect is a differential signal relative to the photoconductivity signal.
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Fiz. Tekh. Poluprovodn. 31, 35–42 (January 1997)
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Gasan-zade, S.G., Sal’kov, E.A. & Shepel’skii, G.A. Photoelectric and photomagnetic properties of the gapless semiconductor CdxHg1−x Te in the infrared and millimeter spectral regions when an energy gap is opened. Semiconductors 31, 29–35 (1997). https://doi.org/10.1134/1.1187047
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DOI: https://doi.org/10.1134/1.1187047