Abstract
Self-organized nano-objects fabricated in different semiconductor systems are currently at the focus of scientific interest because of their unique electronic properties. Transmission electron microscopy and high-resolution electron microscopy have been used to study the InAs quantum dots grown by molecular-beam epitaxy (MBE) on GaAs and InP substrates. Optimal imaging conditions for visualization of quantum dots were established. Size, shape, and stability of the equilibrium island arrays were analyzed with respect to the growth conditions. Both decrease and increase of the As pressure compared to the optimal value were shown to destroy the regular arrangement of the islands. Energy benefit due to the strain relaxation in the InAs islands is likely to be the driving force for their formation.
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Fiz. Tverd. Tela (St. Petersburg) 40, 849–851 (May 1998)
Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.
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Ruvimov, S., Liliental-Weber, Z., Washburn, J. et al. Structural characterization of self-organized nanostructures. Phys. Solid State 40, 781–783 (1998). https://doi.org/10.1134/1.1130394
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DOI: https://doi.org/10.1134/1.1130394