Abstract
It was observed that in uncompensated silicon in sufficiently strong crossed electric (E) and magnetic (H) fields the conductivity σ exhibits hysteresis as a function of E with H=const and as a function of H with Econst. For the same values of E and H the conductivity can differ by a factor of 105. Weak pulses of a field E transfer the conductivity from one branch of the hysteresis loop to another. Very low-intensity background radiation radically changes the form of this loop. The results can be attributed to an insulator-metal transition stimulated in the D − band of silicon by a strong electric field.
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Pis’ma Zh. Éksp. Teor. Fiz. 69, No. 1, 70–74 (10 January 1999)
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Mel’nikov, A.P., Gurvich, Y.A., Gershenzon, E.M. et al. Hysteresis of conduction via impurities in uncompensated crystalline silicon in strong crossed electric and magnetic fields. Jetp Lett. 69, 77–83 (1999). https://doi.org/10.1134/1.567987
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DOI: https://doi.org/10.1134/1.567987