Abstract
Selective photoconductivity at frequency ω=155 cm− was discovered in PbTe(Ga) narrow-gap semiconductors at liquid-nitrogen temperatures. The corresponding energy is much lower than all characteristic energies of the electronic spectrum of the semiconductor. The effect is attributed to optical excitation of a local vibrational mode of an impurity center leading to delocalization of the electrons.
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Pis’ma Zh. Éksp. Teor. Fiz. 63, No. 5, 342–346 (10 March 1996)
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Belogorokhov, A.I., Ivanchik, I.I., Ponomarev, S.V. et al. Selective photoconductivity induced in PbTe(Ga) by a local phonon mode. Jetp Lett. 63, 353–357 (1996). https://doi.org/10.1134/1.567022
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DOI: https://doi.org/10.1134/1.567022