Selective Formation of Titanium Silicide by Chemical Vapor Deposition Using Titanium Halides and Silicon Wafer as the Precursors

Abstract

Titanium silicide thin films were formed on Si substrate by reaction of TiX ₄ (X=C1, Br) with Si under different experimental conditions. The Si consumption and titanium silicide obtained were calculated by the film thickness. In some reactions, titanium silicide thin film was found not only on the Si substrates but also on the SiO₂ wall at the outlet of the reaction chamber. The quantity of Si consumption and the quantity of silicon-containing materials obtained on the wall of the deposition chamber varied as the reaction conditions changed. The minimum Si consumption and maximum titanium silicide obtained on silicon were the most favorable result, found in the reaction of TiBr₄ with Si at 1000°C. The metallization reactions were studied in detail and the reaction pathway is proposed.