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Influence of interstitial oxygen on the superconducting transition temperature of vanadium

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Abstract

The critical temperatureT c and residual resistivity ρ0 were measured in homogeneously oxidized thin vanadium foils. The per at % oxygen induced variations are respectively ΔT c =−1.2K and Δρ0=53 nΩ-m. TheT c data are used to calculate the electron-phonon coupling constant, which decreases 5% per at % of oxygen.

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Authors and Affiliations

  1. Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, Leuven, Belgium

    F. De Schutter & Y. Bruynseraede

  2. Laboratoire de Physique de la Matière Condensée, Université de Nice, Nice, France

    A. Gilabert

Authors
  1. F. De Schutter
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  2. Y. Bruynseraede
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  3. A. Gilabert
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De Schutter, F., Bruynseraede, Y. & Gilabert, A. Influence of interstitial oxygen on the superconducting transition temperature of vanadium. J Low Temp Phys 58, 389–396 (1985). https://doi.org/10.1007/BF00681315

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  • DOI: https://doi.org/10.1007/BF00681315

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