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Fir spectroscopy on shallow donor states in GaAs:Si

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Abstract

Far infrared spectroscopy experiments on the shallow donor states of GaAs:Si are presented. Transitions between shallow donor levels are induced by F.I.R. radiation from an optically pumped molecular gas laser. The measurements are performed by measuring the electrical conductivity of the GaAs:Si sample at fixed laser frequencies by sweeping an external applied magnetic field up to 12 T. In total about 30 different transitions are observed using radiation between 60 μm and 1.8 mm. In low magnetic fields and at high frequencies a series of photoconductivity signals are observed, which we ascribe to transitions from the ground state towards bound donor levels with hydrogen quantum numbers n, l=n−1, and m=n−1.

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Authors and Affiliations

  1. Kamerlingh Onnes and Huygens Laboratories, University of Leiden, P.O. Box 9504, 2300 R.A., Leiden, The Netherlands

    A. C. Labrujere, T. O. Klassen & W. Th. Wenckebach

  2. Philips Research Laboratories, Redhill, UK

    C. T. Foxon

Authors
  1. A. C. Labrujere
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  2. T. O. Klassen
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  3. W. Th. Wenckebach
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  4. C. T. Foxon
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Labrujere, A.C., Klassen, T.O., Wenckebach, W.T. et al. Fir spectroscopy on shallow donor states in GaAs:Si. Int J Infrared Milli Waves 9, 1057–1066 (1988). https://doi.org/10.1007/BF01009300

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  • DOI: https://doi.org/10.1007/BF01009300

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