Abstract
High Electron Mobility (HEM) varactor structures have been studied for millimeter-wave monolithic diode-grid frequency tripler array applications. The improved HEM varactor diode structures provide a highly nonlinear C-V characteristic (i.e., a steep slope of the C-V curve and a large capacitance ratio) which produces high harmonic generation efficiency and reduce the power requirement for efficiently pumping each device. The effects of the light illumination on the C-V characteristics of the Barrier-Intrinsic-N+ (BIN) varactor diode have also been studied and the results will be discussed in this paper. In the development of a monolithic diode-grid frequency multiplier array, the low-loss quasioptical configuration is used for the construction of the multiplier circuit. The study of the effects of the light illumination on the C-V characteristics of varactor diode is important in understanding the potential applications of the quasi-optical varactor diode-grid frequency multiplier array circuit.
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References
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Hwu, R.J., Sadwick, L.P. & Streit, D.C. Millimeter wave monolithic high electron mobility (HEM) varactor diode-grid frequency tripler arrays. Int J Infrared Milli Waves 12, 1409–1423 (1991). https://doi.org/10.1007/BF01883874
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DOI: https://doi.org/10.1007/BF01883874