Summary
The cationic ordering in InGaP epilayers grown by low-pressure vapour phase epitaxy on GaAs substrates has been investigated by X-ray diffraction. The effects of both the substrate miscut and the doping with Si and Zn have been studied. It has been found that ordering effects occur inside relatively small domains on (1–11) and (−111) planes; however, by increasing the miscut angle the domains of the first kind tend to increase their dimensions, while the second ones tend to disappear. Moreover, doping with impurities substituting cations is seen to destroy the order. Photoluminescence anomalies have been revealed and correlated to the size and ordering degree of the ordered domain.
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Francesio, L., Franzosi, P., Caldironi, M. et al. Ordering effects in InGaP/GaAs and InGaAsP/GaAs heterostructures grown by LP-MOVPE. Il Nuovo Cimento D 18, 975–983 (1996). https://doi.org/10.1007/BF02459078
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DOI: https://doi.org/10.1007/BF02459078