Summary
Experimental results are presented on the study of Sb-H complexes in crystalline silicon, employing 119Sb→119Sn source Mössbauer spectroscopy and a low-energy H implantation technique. In addition to a visible component, we observe a large decrease of the Mössbauer intensity associated with the trapping of hydrogen, even at low temperatures. This is interpreted as the formation of a component with a negligible recoilless fraction. The different Mössbauer components were studied as a function of H dose, H-implantation temperature and annealing temperature. The data show that the visible component is associated with the well-known SbH complex, whereas the invisible component is associated with the formation of SbH n (n≥2) complexes. We show that these complexes are in thermal equilibrium with a larger hydrogen reservoir (H *2 ), which governs their thermal stability. No Sb-H complexes are observed in p-type Si after H-implantation, in agreement with the current belief that hydrogen has a deep donor level in the gap. The microscopic structure of the various Sb-H and Sn-H complexes was studied with first-principles calculations using the pseudopotentialdensity-functional approach. The structure of the Sb-H complex is found to be similar to the P-H complex, with the H in an antibonding site of a Si atom neighbouring the Sb impurity. For SbH2 three configurations are found with energies differing by less than ≈ 0.1 eV. We find that the reaction SbH+H≠SbH2 is exothermic. We argue that the SbH2 complexes are shallow donors, irrespective of the structure. Therefore, the formation of SbH2 may depassivate the sample.
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References
Myers S. M. et al., Rev. Mod. Phys., 64 (1990) 559.
Pankove J. I. and Johnson N. M. (Editors), Hydrogen in semiconductors, in Semiconductors and Semimetals, Vol. 34 (Academic Press, New York, N.Y.) 1991.
Tavendale A. J., Alexiev D. and Williams A. A., Appl. Phys. Lett., 47 (1985) 316.
Stavola M., Pearton S. J., Lopata J. and Dautremont-Smith W. C., Phys. Rev. B, 37 (1988) 8313.
Nichols C. S., Clarke D. R. and Van de Walle C. G., Phys. Rev. Lett., 63 (1989) 1090.
Chang K. J. and Chadi D. J., Phys. Rev. Lett., 60 (1988) 1422.
Van de Walle C. G., Denteneer P. J. H., Bar-Yam Y. and Pantelides S. T., Phys. Rev. B, 39 (1989) 10791.
Stavola M., Bergman K., Pearton S. J. and Lopata J., Phys. Rev. Lett., 24 (1988) 2786.
Johnson N. M., Herring C. and Chadi D. J., Phys. Rev. Lett., 56 (1986) 769.
Zhu J., Johnson N. M. and Herring C., Phys. Rev. B, 41 (1990) 12354.
Seager C. H. and Anderson R. A., Solid State Commun., 76 (1990) 285.
Johnson N. M., Herring C. and Van de Walle C. G., Phys. Rev. Lett., 73 (1994) 130.
Bergman K., Stavola M., Pearton S. J. and Lopata J., Phys. Rev. B, 37 (1988) 2770.
Denteneer P. J. H., Van de Walle C. G. and Pantelides S. T., Phys. Rev. B, 41 (1990) 3885.
Zhang S. B. and Chadi D. J., Phys. Rev. B, 41 (1990) 3882.
Corbett J. W., Pearton S. J. and Stavola M., in Defects Control in Semiconductors, edited by K. Sumino (North-Holland, Amsterdam) 1990, p. 53.
Herring C. and Johnson N. M., in Semiconductor and Semimetals, edited by J. I. Pankove and N. M. Johnson, Vol. 34 (Academic Press, New York, N.Y.) 1991, Chapt. 10.
Chang K. J. and Chadi D. J., Phys. Rev. Lett., 62 (1989) 937.
Johnson N. M. et al., Mater. Sci. Forum, 83–87 (1992) 33.
Korpas L., Corbett J. W. and Estreicher S. K., Mater. Sci. Forum, 83–87 (1992) 27.
Liang Z. N. and Niesen L., Mater. Sci. Forum, 83–87 (1992) 99.
Liang Z. N., Niesen L. and Haas C., Phys. Rev. Lett., 72 (1994) 1846.
Liang Z. N., Denteneer P. J. H and Niesen L., Phys. Rev. B, 52 (1995) 8864.
Kohn W. and Vashsista P., in Theory of the Inhomogeneous Electron Gas, edited by S. Lundqvist and N. H. March (Plenum, New York, N.Y.) 1983, Chapt. 2.
Cerofolini G. F. et al., Phys. Rev. B, 41 (1990) 12607.
Weyer G., Mössbauer Effect Methodology, 10 (1976) 301.
Liang Z. N. and Niesen L., Nucl. Instrum. Methods Phys. Res. B, 63 (1992) 147.
Nylandsted-Larsen A., Petersen F. T. and Weyer G., J. Appl. Phys., 59 (1986) 1908.
Seager C. H., Anderson R. A. and Brice D. K., J. Appl. Phys., 68 (1990) 3268.
Liang Z. N., Thesis, Groningen (1994).
Johnson N. M. and Herring C., Phys. Rev. B, 43 (1991) 14297.
Denteneer P. J. H., Van de Walle C. G. and Pantelides S. T., Phys. Rev. B, 39 (1989) 10809.
Bachelet G. B., Hamann D. R. and Schulüter M., Phys. Rev. B, 26 (1982) 4199.
Monkhorst H. J. and Pack J. D., Phys. Rev. B, 13 (1976) 5188.
Martins J. L. and Zunger A., Phys. Rev. B, 30 (1984) 6217.
Kraut E. A. and Harrison W. A., J. Vac. Sci. Technol. B, 3 (1985) 1267.
Van Netten T. J., Stapel K. and Niesen L., J. Phys. (Paris), 47 (1986) C8–1049.
Weast R. C. (Editor), CRC Handbook of Chemistry and Physics (Chemical Rubber, Boca Raton) 1984.
Holbech J. D., Bech-Nielsen B., Jones R., Sitch P. and Öberg S., Phys. Rev. Lett., 71 (1993) 875.
Boyce J. B. and Ready S. E., Physica B, 170 (1991) 305; Mater. Sci. Forum, 83–87 (1992) 1.
Denteneer P. J. H., Van de Walle C. G. and Pantelides S. T., Phys. Rev. Lett., 62 (1989) 1884.
Watkins G. D., Mater. Sci. Forum, 38–41 (1989) 39.
Denteneer P. J. H., Proceedings of the XX International Conference on the Physics of Semiconductors, edited by E. M. Anastassakis and J. D. Joannopoulos (World Scientific, Singapore) 1990, p. 775.
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Liang, Z.N., Niesen, L., Haas, C. et al. Donor-hydrogen complexes in crystalline silicon. Il Nuovo Cimento D 18, 181–198 (1996). https://doi.org/10.1007/BF02458891
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DOI: https://doi.org/10.1007/BF02458891