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Photoluminescence studies of Si nanocrystals

  • Published:
Il Nuovo Cimento D

Summary

We report room temperature time-resolved photoluminescence (PL) and temperature dependence of continuous wave (cw) PL studies of high fluence (from 3·1016 to 3·1017 cm−2) Si+-implanted thermal SiO2 layers after annealing at high temperature (T=1000°C). Such measurements were related to TEM analysis of samples. Nancocrystals were observed at TEM only a samples implanted at higher fluence. In these samples a near infrared PL signal peaked at approximately 1.5 eV with decay time of about 100 μs is present. Besides, in all samples a light emission is present in the green region of the spectrum. The intensity of the emission shows large variations with ion fluence, and is characterized by 0.4, 2 and 7 ns decay times.

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Authors and Affiliations

  1. Via Diacono 1, 20133, Milano, Italy

    L. Zanghieri

  2. Istituto Guido Donegani, Enichem, Via Fauser 4, 28100, Novara, Italy

    L. Meda

Authors
  1. L. Zanghieri
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  2. L. Meda
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Zanghieri, L., Meda, L. Photoluminescence studies of Si nanocrystals. Nuov Cim D 18, 1167–1177 (1996). https://doi.org/10.1007/BF02464694

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  • DOI: https://doi.org/10.1007/BF02464694

PACS 85.60

PACS 01.30.Cc

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