Summary
We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.
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von Plessen, G., Meier, T., Koch, M. et al. Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice. Il Nuovo Cimento D 17, 1759–1762 (1995). https://doi.org/10.1007/BF02457276
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DOI: https://doi.org/10.1007/BF02457276