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Influence of Ar-milling on cross-section structure of gallium arsenide

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Il Nuovo Cimento D

Summary

The results obtained by cross-sectional technique applied to Si+-implanted GaAs crystals, thinned by Ar+-milling, are presented. The effects of the disordered layers produced by Ar+-milling have been estimated through high-resolution transmission electron microscopy (HRTEM).

Riassunto

Nel presente lavoro si mostrano alcuni risultati riguardanti lo studio del danno provocato dal bombardamento con Ar+ durante l'assottigliamento di campioni di GaAs impiantato con Si+. Gli effetti prodotti da tale tecnica sono stati osservati e valutati su sezioni trasversali dei campioni tramite microscopia elettronica ad alta risoluzione (HRTEM).

Резюме

Приводятся результаты исследования влияния Ar+-бомбаровки в процессе утончения кристаллов GaAs, имплантированных Si+. Используя трансмиссионную электронную микроскопию высокого разрешения, оцениваются эффекты, связанные с разупорядочением слоев при Ar+-бомбардировке.

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Author notes

  1. G. Vitali

    Present address: GNSM (Gruppo Nazionale Struttura della Materia) of C.N.R., Rome, Italy

Authors and Affiliations

  1. Department of Energetics, Università «La Sapienza», Via A. Scarpa, 14, 00161, Roma, Italia

    G. Vitali & M. Rossi

  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, Blvd. Lenin 72, 1874, Sofia, Bulgaria

    M. Kalitzova & N. Pashov

  3. Institute of Solid State Physics and Electron Microscopy, Academy of Sciences of the GDR, Weinberg, 4020, Halle(s), GDR

    P. Werner & H. Bartsch

Authors
  1. G. Vitali
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  2. M. Rossi
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  3. M. Kalitzova
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  4. N. Pashov
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  5. P. Werner
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  6. H. Bartsch
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Vitali, G., Rossi, M., Kalitzova, M. et al. Influence of Ar-milling on cross-section structure of gallium arsenide. Il Nuovo Cimento D 10, 221–227 (1988). https://doi.org/10.1007/BF02450100

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  • DOI: https://doi.org/10.1007/BF02450100

PACS. 61.16.Di

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