References
H. Kotaki, M. Nakano, S. Hayashida, S. Kakimoto, K. Mitsuhashi and J. Takagi, Jpn. J. Appl. Phys. 34 (1995) 776.
S. P. Murarka, “Metallization; theory and practice for VLSI and ULSI” (Butterworth-Heinemann, 1993).
M. J. Kim and D. M. Brown, IEEE, Trans. Electron. Devices ED-30 (1983) 598.
T. P. Chow, D. M. Brown, A. J. Steckl and M. Garfinkel, J. Appl. Phys. 51 (1980) 5981.
K. Ninomiya, K. Suzuki, S. Nishimatsu and O. Okada, ibid. 64 (1987) 1459.
G. Turban, J. F. Coulon and M. Mutsukura, Thin Solid Films 176 (1989) 289.
C. D. Wagner, W. M Riggs, L. E. Davis, J. F. Moulder and G. E. Muilenberg (eds), “Handbook of x-ray photoelectron spectroscopy” (Perkin-Elmer, 1978), p. 104.
W. Bienvogel and B. Hasler, Solid State Technol. 26 (1983) 125.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Baek, KH., Yun, S.J., Park, JM. et al. The Role of Sulfur During Mo Etching Using SF6 and Cl2 Gas Chemistries. Journal of Materials Science Letters 17, 1483–1486 (1998). https://doi.org/10.1023/A:1026434619677
Issue Date:
DOI: https://doi.org/10.1023/A:1026434619677