References
A. R. Badzian, T. Badziab, R. Roy, R. Messier and K. E. Spear, Mater. Res. Bull. 23 (1988) 531.
Z. Li, L. Wang, T. Suzuki, A. Argoitia, P. Pirouz and J. C. Angus, J. Appl. Phys. 73 (1992) 711.
S. I. Shah, D. J. Walls, M. M. Waute and D. Guerin, Appl. Phys. Lett. 67 (1995) 3355.
N. M. Hwang, J. H. Hahn and D. Y. Yoon, J. Cryst. Growth 160 (1996) 87.
N. M. Hwang and D. Y. Yoon, ibid. 160 (1996) 98.
N. M. Hwang, J. H. Hahnand D. Y. Yoon, ibid. 162 (1996) 55.
C. Van Leeuwen, ibid. 46 (1979) 91.
B. R. Pamplin, “Crystal Growth”, 2nd Edn (Pergamon Press, Oxford, 1980).
N. M. Hwang and D. Y. Yoon, J. Mater. Sci. Lett. 13 (1994) 1437.
B. V. Spitsyn, L. L. Bouilov and B. V. Derjaguin, J. Cryst. Growth 52 (1981) 219.
J. C. Angus and C. C. Hayman, Science 241 (1988) 913.
M. Frenklach, J. Appl. Phys. 65 (1989) 5142.
J. E. Butler and R. L. Woodin, Philos. Trans. R. Soc. Lond. A 342 (1993) 209.
J.-T. Wang, P.-J. Zheng, Q.-H. Yang and H. Wang, in “Diamond Materials IV”, edited by K. V. Ravi and J. P. Dismukes (The Electrochemical Society Pennington, NJ, 1995) p. 13.
J.-T. Wang, Z.-Q. Huang, Q.-H. Yang, D. W. Zhang and Y.-Z. Wan, in Proceedings of the Thirteenth International Conference on CVD, edited by T. M. Besman, M. D. Allendorf, M. Robinson, and R. K. Ulrich (The Electrochemical Society Pennington, NJ, 1996) p. 727.
M. C. Polo, J. Cifre, G. Sanchez, R. Aguiar, M. Varela and J. Esteve, Appl. Phys. Lett. 67 (1995) 485.
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Zhang, D.W., Wan, YZ., Liu, ZJ. et al. Driving force for diamond deposition in the activated gas phase under low pressure. Journal of Materials Science Letters 16, 1349–1351 (1997). https://doi.org/10.1023/A:1018572202430
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DOI: https://doi.org/10.1023/A:1018572202430