Abstract
An application of direct bonding method for copper to silicon nitride (Si3N4) joining was investigated. Si3N4 was sintered with 5wt% MgO at 1700 ° C for 30 min in nitrogen atmosphere, and oxidized at various temperatures. The bonding was performed at 1075 ° C in nitrogen atmosphere with low oxygen partial pressure. The direct bonding was not achieved for the Si3N4 oxidized below 1200 ° C or nonoxidized. During oxidation, magnesium ion added as sintering aids, diffused out to the surface of Si3N4 and formed MgSiO3, which seemed to have an important role in the bonding. Fracture of the bonded specimen under tensile stress took place within the oxide layer of Si3N4. The bonding strength was decreased with oxidation temperature and time. Maximum strength was found to be 106 kg cm−2 for the Si3N4 oxidized at 1200 ° C for 1 h.
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Kim, S.T., Kim, C.H., Park, J.Y. et al. The direct bonding between copper and MgO-doped Si3N4 . J Mater Sci 25, 5185–5191 (1990). https://doi.org/10.1007/BF00580149
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DOI: https://doi.org/10.1007/BF00580149