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The abnormal grain growth and dielectric properties of (Nb, Ba) doped TiO2 ceramics

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Abstract

The effect of consolidation pressure and crystallite size of powders crystal phases of TiO2 on sintered microstructure of TiO2 ceramics doped with 0.25 mol % Nb and 1.0 mol % Ba were investigated. Also, the development sequence of abnormal grain growth of (niobium, barium) doped TiO2 ceramics was proposed. The second phases of as-sintered surface were determined. The dielectric properties of Ag-electroded samples were correlated with the resistivity of the bulk (Nb, Ba) doped TiO2 ceramics. Abnormal grain growth lowered the resistivity of bulk material of (Nb, Ba) doped TiO2 ceramics, and moved the relaxation frequency of fan δ to high frequency region over 105 Hz. Controlling the sintered microstructures can obtain reasonably good dielectric properties.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

    C. J. Chen & J. M. Wu

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  1. C. J. Chen
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  2. J. M. Wu
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Chen, C.J., Wu, J.M. The abnormal grain growth and dielectric properties of (Nb, Ba) doped TiO2 ceramics. J Mater Sci 24, 2871–2878 (1989). https://doi.org/10.1007/BF02385640

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  • DOI: https://doi.org/10.1007/BF02385640

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