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Structural and electrical properties of the glassy semiconductor system Cu-As-Te

Part 1Electrical and switching aspects, and their correlation with the structure

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Abstract

A method has been developed for measuring electrical conductivity in bulk samples of glassy semiconductors, based on the procedure described by Valdes, which is used to determine the conductivity of the compositions CU0.05As0.50Te0.45 and Cu0.15As0.40Te0.45. These experimental results are justified by the structural models corresponding to each of the compositions. The estimates of the number of bonds of each of the possible types, as well as their ionization energies, are used for this purpose. This analysis is preceded by the description of an electrical conduction model for this type of semiconductor material. Finally, the results obtained in the study of the properties of electrical switching are given.

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Authors and Affiliations

  1. Departamento de Física Fundamental, Facultad de Ciencias, Universidad de Cádiz, Apartado 40, Puerto Real (Cádiz), Spain

    E. Marquez, J. Vazquez, N. de la Rosa-Fox, P. Villares & R. Jimenez-Garay

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  1. E. Marquez
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  2. J. Vazquez
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  3. N. de la Rosa-Fox
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  4. P. Villares
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  5. R. Jimenez-Garay
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Marquez, E., Vazquez, J., de la Rosa-Fox, N. et al. Structural and electrical properties of the glassy semiconductor system Cu-As-Te. J Mater Sci 23, 1399–1404 (1988). https://doi.org/10.1007/BF01154607

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  • DOI: https://doi.org/10.1007/BF01154607

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