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The chemical preparation of gallium nitride layers at low temperatures

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Abstract

The preparation and the physical and elecrical properties of gallium nitride layers prepared at temperatures in the region of 500° C is recorded.

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Authors and Affiliations

  1. Royal Signals and Radar Establishment, Great Malvern, Worcestershire, UK

    P. J. Born & D. S. Robertson

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  1. P. J. Born
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  2. D. S. Robertson
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Born, P.J., Robertson, D.S. The chemical preparation of gallium nitride layers at low temperatures. J Mater Sci 15, 3003–3009 (1980). https://doi.org/10.1007/BF00550368

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  • DOI: https://doi.org/10.1007/BF00550368

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