Abstract
The previously published theory of our model on the evolution of a surface contour under ion etching is recalled. Further improvements dealing with angular points of the profile shows that: angular points having straight trajectory may exist; and they can be found either by computation or by graphic method.
The experimental verification of the model is made on steps etched in silicon. SEM observations of the evolution of such steps under argon ion bombardment show good agreement between computed and experimental results.
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J. P. Ducommun, M. Cantagrel and M. Marchal, J. Mater. Sci. 9 (1974) 725.
M. J. Nobes, J. S. Colligon and G. Carter, ibid 4 (1969) 730.
G. Carter, J. S. Colligon and M. J. Nobes, ibid 6 (1971) 115.
C. Catana, J. S. Colligon and G. Carter, ibid 7 (1972) 467.
G. Carter, J. S. Colligon and M. J. Nobes, ibid 8 (1973) 1473.
D. J. Barber, F. C. Frank, M. Moss, J. W. Steeds, I. S. T. Tsong, ibid 8 (1973) 1030.
A. Teodorescu and F. Vasilu, Rad. Effects 15 (1972) 101.
H. I. Smith, R. C. Williamson and W. T. Brogan, I.E.E.E. Ultrasonics Symposium (1972) p. 198.
F. C. Frank, “Growth and Perfection of Crystals” (Wiley, New York, 1958) p. 411. J. P. Ducommun, Thesis, Paris VI University (1974).
M. Cantagrel and M. Marchal, J. Mater. Sci. 8 (1973) 1711.
G. S. Anderson, J. Appl. Phys. 37 (1966) 3455.
N. Laegreid and G. K. Wehner, ibid 32 (1961) 365.
L. I. Maissel and R. Glang, “Handbook of thin film technology” (McGraw Hill, 1970) p. 4–40.
A. D. G. Stewart and M. W. Thomson, J. Mater. Sci. 4 (1969) 56.
A. R. Bayly, ibid 7 (1972) 404.
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Ducommun, J.P., Cantagrel, M. & Moulin, M. Evolution of well-defined surface contour submitted to ion bombardment: computer simulation and experimental investigation. J Mater Sci 10, 52–62 (1975). https://doi.org/10.1007/BF00541031
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DOI: https://doi.org/10.1007/BF00541031