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Evolution of well-defined surface contour submitted to ion bombardment: computer simulation and experimental investigation

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Abstract

The previously published theory of our model on the evolution of a surface contour under ion etching is recalled. Further improvements dealing with angular points of the profile shows that: angular points having straight trajectory may exist; and they can be found either by computation or by graphic method.

The experimental verification of the model is made on steps etched in silicon. SEM observations of the evolution of such steps under argon ion bombardment show good agreement between computed and experimental results.

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Ducommun, J.P., Cantagrel, M. & Moulin, M. Evolution of well-defined surface contour submitted to ion bombardment: computer simulation and experimental investigation. J Mater Sci 10, 52–62 (1975). https://doi.org/10.1007/BF00541031

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  • DOI: https://doi.org/10.1007/BF00541031

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