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Defects in electron-irradiated 3C-SiC epilayers observed by positron annihilation

  • Section III.4: Defects And Impurity Dynamics
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Abstract

Positron annihilation has been used to study defects induced by 1 MeV electron irradiation in cubic silicon carbide (3C-SiC) epitaxially grown on Si substrates by chemical vapor deposition. Narrowing of the Doppler-broadened energy spectrum of annihilation gamma-rays by the electron irradiation was observed in the fluence range above 5 × 1016 e/cm2. The electron fluence dependence of the narrowing is accounted for by the introduction of monovacancies and divacancies in 3C-SiC by the irradiation.

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Authors and Affiliations

  1. Japan Atomic Energy Research Institute, 1233 Watanuki, 370-12, Takasaki, Gunma, Japan

    H. Itoh, M. Yoshikawa & I. Nashiyama

  2. Institute of Materials Science, University of Tsukuba, 1-1-1 Tennodai, 305, Tsukuba, Ibaraki, Japan

    L. Wei & S. Tanigawa

  3. Electrotechnical Laboratory, 1-1-4 Umezono, 305, Tsukuba, Ibaraki, Japan

    S. Misawa, H. Okumura & S. Yoshida

Authors
  1. H. Itoh
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  2. M. Yoshikawa
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  3. I. Nashiyama
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  4. L. Wei
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  5. S. Tanigawa
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  6. S. Misawa
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  7. H. Okumura
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  8. S. Yoshida
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Itoh, H., Yoshikawa, M., Nashiyama, I. et al. Defects in electron-irradiated 3C-SiC epilayers observed by positron annihilation. Hyperfine Interact 79, 725–729 (1993). https://doi.org/10.1007/BF00567599

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  • DOI: https://doi.org/10.1007/BF00567599

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