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Low-temperature muonium depolarization in Si and Ge

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Abstract

Measurements of the normal muonium depolarization rate in high purity silicon and germanium have been performed between 1.5 and 4.2 K. Two different Si samples and one Ge sample were investigated in a transverse field of 5 G, and in all cases, a temperature-independent depolarization rate was observed. The silicon results disagree with earlier work which showed a depolarization rate which decreased with increasing temperature in this temperature range. These results are compared with measurements of the direct muonium hyperfine transition.

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Authors and Affiliations

  1. Physics Institute, University of Zürich, 8001, Zürich, Switzerland

    B. D. Patterson, E. Holzschuh & R. F. Kiefl

  2. IBM Research Lab., 8803, Rueschlikon, Switzerland

    K. W. Blazey

  3. Department of Physics, Rice University, 77251, Houston, Texas, USA

    T. L. Estle

Authors
  1. B. D. Patterson
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  2. E. Holzschuh
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  3. R. F. Kiefl
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  4. K. W. Blazey
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  5. T. L. Estle
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Additional information

The authors wish to acknowledge the support of the N.S.F. grant DMR-79-09223.

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Patterson, B.D., Holzschuh, E., Kiefl, R.F. et al. Low-temperature muonium depolarization in Si and Ge. Hyperfine Interact 18, 599–602 (1984). https://doi.org/10.1007/BF02064875

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  • DOI: https://doi.org/10.1007/BF02064875

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