Abstract
The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·1015−3.8·1018 cm−2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n0 increases (from 1.3 cm−1 in GaAs with n0 — 1017 cm−3 to 0.7 cm−1 in GaAs with n0 ≃ 1018 cm−3). The rate of removal of charge carriers (λ) increases as n0 increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with NIn ≥ 1018 cm−3 decreases λ.
Similar content being viewed by others
Literature cited
F. P. Korshunov, G. A. Prokhorenko, N. F. Kurilovich, and N. G. Kolin, Dokl. Akad. Nauk BSSR,31, No. 8, 695 (1987).
N. G. Kolin, T. I. Kol'chenko, and V. M. Lomako, Fiz. Tekh. Poluprovodn.,21, No. 2, 327 (1987).
V. A. Bykovskii, V. A. Girii, et al., Fiz. Tekh. Poluprovodn.,23, No. 1, 79 (1989).
L. I. Kolesnik, N. G. Kolin, et al., Fiz. Tekh. Poluprovodn.,19, No. 7, 1211 (1985).
F. P. Korshunov, T. A. Prokhorenko, et al., Gallium Arsenide [in Russian], Vol. 1, Tomsk (1987), p. 67.
V. N. Brudnyi and V. M. Diamant, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 10, 81 (1986).
D. C. Look, J. Appl. Phys.,62(9), No. 1, 3660 (1987).
Zh. I. Alferov, V. M. Andreev, et al., Fiz. Tekh. Poluprovodn.,6, No. 10, 2015 (1972).
I. A. Bobrovnikova, L. G. Lavrent'eva, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 2, 96 (1985).
N. S. Rytova and E. V. Solov'eva, Fiz. Tekh. Poluprovodn.,20, No. 8, 1380 (1986).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.
Rights and permissions
About this article
Cite this article
Brudnyi, V.N., Budnitskii, D.L., Kolin, N.G. et al. Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide. Soviet Physics Journal 34, 316–321 (1991). https://doi.org/10.1007/BF00898094
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00898094