Abstract
Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·1018 cm−3, 1.5·1017 cm−3) that was doped with copper under different diffusion regimes. Measurements of the Hall effect revealed centers with an ionization energy 0.175 ± 0.005 eV, their concentration depending on the rate of cooling of the samples. The cathodoluminescence and Hall effect data suggest that the cathodoluminescence band observed at 1.35 eV in GaAs∶Sn∶Cu is associated with radiative transitions of electrons to centers with ε a =Ev + 0.175 eV. The hole lifetime in GaAs∶Sn∶Cu has a complicated temperature dependence which can be explained qualitatively by the presence of two types of capture center.
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E. V. Solov'eva, V. V. Karataev, M. G. Mil'vidskii, and G. A. Nemtsova, Fiz. Tverd. Tela (Leningrad),7, 11, 2126 (1973).
N. A. Anastas'eva, V. T. Bublik, V. B. Osvenskii, M. G. Mil'vidskii, O. G. Stolyarov, and L. P. Kholodnyi, Kristallografiya,23, 2, 314 (1978).
N. A. Anastas'eva, V. T. Bublik et al., in: Gallium Arsenide, No. 4 [in Russian], Izd. TGU, Tomsk (1974), p. 68.
Yu. V. Agrafenin, L. P. Bazhukov, I. Miotkovskii, and A. P. Sherstyakov, in: “Generation of microwave oscillations by means of the Gunn effect,” in: Proc. All-Union Symposium [in Russian], Novosibirsk (1974), p, 344.
A. S. Epstein, S. Share, R. A. Polimadei, and A. H. Herzog, IEEE Trans. Nucl. Sci.,23, 1654 (1976).
I. V. Kamenskaya, M. A. Krivov, E. V. Malisova, V. S. Morozov, M. P. Nikiforova, E. A. Popova, and S. S. Khludkov, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 7, 93 (1979).
M. A. Krivov, É. N. Mel'chenko, and S. S. Khludkov, Izv. Vyssh. Uchebn. Zaved. Fiz., No. 9, 11 (1979).
W. Schairer, Solid State Commun.,8, 2017 (1970).
H. Hakashima, Jpn. J. Appl. Phys.,10, 1737 (1971).
J. Nishizawa, S. Shinozani, and K. Ishida, J. Appl. Phys.,44, 1638 (1973).
In: Gallium Arsenide. Preparation, Properties, and Uses [in Russian], Nauka, Moscow (1973), p. 269.
K. Konstantinesku and V. Dolokan, Fiz. Tekh. Poluprovodn.,3, 3, 329 (1969).
K. D. Glinchuk and N. M. Litovchenko, Fiz. Tekh. Poluprovodn.,1, 7 (1967).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 58–63, September, 1980.
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Kamenskaya, I.V., Krivov, M.A., Malisova, E.V. et al. Behavior of copper in gallium arsenide with high tin concentration. Soviet Physics Journal 23, 801–806 (1980). https://doi.org/10.1007/BF00892529
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DOI: https://doi.org/10.1007/BF00892529