Abstract
The discussion concerns the signs of the contributions to the emf from carriers of negative effective mass (electrons and holes); it is shown that positive contributions to the Hall emf and to the thermo-emf may be due to drift of holes having m* > 0 as well as to drift of negatively charged carriers having m* < 0. On the other hand, negative values of these contributions may be due to drift of holes having m* < 0.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Literature cited
I. M. Tsidil'kovskii, Electrons and Holes in Semiconductors [in Russian], Nauka, Moscow (1972), pp. 422–429, 488–503.
G. Mirdel, Electrophysics [Russian translation], Mir, Moscow (1972), p. 449.
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 29–32, December, 1977.
Rights and permissions
About this article
Cite this article
Smolin, M.D. The contribution of negative-effective-mass carriers to kinetic-effect emf's. Soviet Physics Journal 20, 1556–1558 (1977). https://doi.org/10.1007/BF00897420
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF00897420