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The exoelectronic emission of germanium and silicon

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Abstract

The experimental results of a study of the exoemission of germanium and silicon following irradiation and mechanical processing are given. An analysis of the data obtained shows the correlation between the exoelectronic emission and the defects in the surface layers of the semiconductor. The relationships obtained are useful for understanding the mechanism of exoemission, as well as for the application of the exoemission method for estimating the physical condition of surface layers which are damaged as a result of mechanical action or radiation.

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Authors and Affiliations

  1. Kirov Ural Polytechnical Institute, USSR

    V. I. Kryuk, V. S. Kortov & R. I. Mints

  2. The Metal Sciences Research Laboratories, USSR

    V. I. Kryuk, V. S. Kortov & R. I. Mints

Authors
  1. V. I. Kryuk
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  2. V. S. Kortov
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  3. R. I. Mints
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Kryuk, V.I., Kortov, V.S. & Mints, R.I. The exoelectronic emission of germanium and silicon. Soviet Physics Journal 11, 70–72 (1968). https://doi.org/10.1007/BF00820481

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  • DOI: https://doi.org/10.1007/BF00820481

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