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The effect of X-rays on silicon and silicon p-n junctions

III. The frenkel effect in silicon diodes exposed to X-rays

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References

  1. M. A. Krivov and S. V. Malyanov, Izv. VUZ. Fizika [Soviet Physics Journal], no. 4, 119, 1966.

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  2. M. A. Krivov and S. V. Malyanov, collection: Proc. 1-st Conference on the Radiation Physics of Solid Bodies, Kiev, 1965, (in press).

  3. M. A. Krivov, S. V. Malyanov, and V. I. Gaman, Izv. VUZ. Fizika [Soviet Physics Journal], (in the press).

  4. V. I. Gaman and V. M. Kalygina, Surface and Contact Phenomena in Semi-conductors (Conference Proceedings) [in Russian], p. 147, Tomsk, 1964.

  5. V. I. Gaman, Lecture, 3-rd All-Union Symposium on the Physics of Thermal Current Carriers, [in Russian], Vilnius, 1965.

  6. A. Charlesby, Nuclear Radiation and Polymers [Russian translation], IL, 1962.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    M. A. Krivov, S. V. Malyanov & V. I. Gaman

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  1. M. A. Krivov
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  2. S. V. Malyanov
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  3. V. I. Gaman
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Krivov, M.A., Malyanov, S.V. & Gaman, V.I. The effect of X-rays on silicon and silicon p-n junctions. Soviet Physics Journal 10, 106–109 (1967). https://doi.org/10.1007/BF00822017

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  • DOI: https://doi.org/10.1007/BF00822017

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