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Effect of growth conditions on InAs nanoislands formation on Si(100) surface

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Czechoslovak Journal of Physics Aims and scope

Abstract

In this paper we have studied the island formation during InAs/Si(100) three dimensional (3D) heteroepitaxial growth using RHEED, SEM and TEM methods. We have found the strong influence of the growth conditions on the surface morphology. Both kinetic and energetic parameters play an important role during the growth in InAs/Si system. Dislocation-free InAs islands are formed at the Si(100) when lateral size is less then 5 nm.

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Authors and Affiliations

  1. Institute for Analytical Instrumentation, Russian Acad. Sci., Rizhsky 26, 198103, St. Petersburg, Russia

    G. E. Cirlin, N. K. Polyakov, V. N. Petrov, V. A. Egorov & Yu. B. Samsonenko

  2. A.F.Ioffe Physico-Technical Institute RAS, Politechnicheskaya 26, 194021, St. Petersburg, Russia

    G. E. Cirlin & Yu. B. Samsonenko

  3. A.F. Ioffe Physico-Technical Institute, Russian Acad. Sci., Politechnicheskaya 26, 194021, St. Petersburg, Russia

    D. V. Denisov, V. M. Busov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov & N. N. Ledentsov

  4. Institut für Festkörperphysik, Technische Universität, Hardenbergstrasse 36, D-10623, Berlin, Germany

    N. N. Ledentsov

  5. Institut für Festkörperphysik, Technishe Universität, Hardenbergstrasse 36, D-10623, Berlin, Germany

    D. Bimberg

  6. Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120, Halle (Saale), Germany

    N. D. Zakharov & P. Werner

Authors
  1. G. E. Cirlin
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  2. N. K. Polyakov
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  3. V. N. Petrov
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  4. V. A. Egorov
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  5. Yu. B. Samsonenko
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  6. D. V. Denisov
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  7. V. M. Busov
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  8. B. V. Volovik
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  9. V. M. Ustinov
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  10. Zh. I. Alferov
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  11. N. N. Ledentsov
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  12. D. Bimberg
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  13. N. D. Zakharov
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  14. P. Werner
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Additional information

This work was partially supported by INTAS Grant No 96-0242, RFBR Grant No 98-02-18317 and Grant No 99-02-16799, Scientific Programmes “Physics of Solid State nanostructures” Grant No 98-2029 and “Methods and Devices of Micro- and Nanoelectronics” Grant No 02.04.5.1.40.E.46. G.E. Cirlin and B.V. Volovik are grateful to the INTAS Young Scientists Fellowship (Grant No 98-54 and No 98-41, respectively).

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Cirlin, G.E., Polyakov, N.K., Petrov, V.N. et al. Effect of growth conditions on InAs nanoislands formation on Si(100) surface. Czech J Phys 49, 1547–1552 (1999). https://doi.org/10.1023/A:1022811613305

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  • DOI: https://doi.org/10.1023/A:1022811613305

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