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Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams

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Czechoslovak Journal of Physics Aims and scope

Abstract

Direct formation of InGaAs/GaAs quantum dots is studied comparatively by Reflection High Energy Electron Diffraction, Scanning Tunneling Microscopy and Photoluminescence methods. It is found that submonolayer migration enhanced epitaxy growth mode allows a reduction in the dispersion of quantum dots size distribution as compared to submonolayer molecular beam epitaxy. In situ and ex situ results obtained are in agreement with each other and give a conceptual kinetic picture of the growth processes during epitaxy from molecular beams.

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Author notes

  1. N.N. Ledentsov

    Present address: A.F. Ioffe Physical-Technical Institute, Russian Acad. Sci., Polytechnicheskaya 26, 194021, St. Petersburg, Russia

Authors and Affiliations

  1. Institute for Analytical Instrumentation, Russian Acad. Sci., Rizhsky pr. 26, 198103, St. Petersburg, Russia

    G.E. Cirlin, V.N. Petrov, V.G. Dubrovskii, A.O. Golubok, S.Ya. Tipissev & G.M. Guryanov

  2. A.F. Ioffe Physical-Technical Institute, Russian Acad. Sci., Polytechnicheskaya 26, 194021, St. Petersburg, Russia

    M.V. Maximov

  3. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin, D-10623, Germany

    N.N. Ledentsov & D. Bimberg

Authors
  1. G.E. Cirlin
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  2. V.N. Petrov
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  3. V.G. Dubrovskii
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  4. A.O. Golubok
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  5. S.Ya. Tipissev
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  6. G.M. Guryanov
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  7. M.V. Maximov
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  8. N.N. Ledentsov
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  9. D. Bimberg
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Cirlin, G., Petrov, V., Dubrovskii, V. et al. Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams. Czechoslovak Journal of Physics 47, 379–384 (1997). https://doi.org/10.1023/A:1021294719812

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  • DOI: https://doi.org/10.1023/A:1021294719812

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