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On the oxidation of silicon in a microwave discharge

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Czechoslovak Journal of Physics B Aims and scope

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References

  1. Kooi E.: The Surface Properties of Oxidized Silicon. Eindhoven 1967.

  2. Ligenza J. R.: J. Appl. Phys.36 (1965), 2703.

    Google Scholar 

  3. Kraitchman J.: J. Appl. Phys.38 (1967), 4323.

    Google Scholar 

  4. Lončar G. et al.: Internal Technical Report, Fac. of Nucl. Sci. and Phys. Eng. Tech. University, Prague 1965.

    Google Scholar 

  5. Deal B. E., Grove A. S.: J. Appl. Phys.36 (1965), 3770.

    Google Scholar 

  6. Kudela K.: Thesis, Faculty of Nucl. Sci. and Phys. Eng., Prague 1969.

    Google Scholar 

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Authors and Affiliations

  1. Faculty of Nuclear Science and Physical Engineering, Technical University, Prague

    K. Kudela, G. Lončar & A. Bürger

  2. Communication Research Institute, Prague

    A. Bürger

Authors
  1. K. Kudela
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  2. G. Lončar
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  3. A. Bürger
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Kudela, K., Lončar, G. & Bürger, A. On the oxidation of silicon in a microwave discharge. Czech J Phys 21, 1016–1018 (1971). https://doi.org/10.1007/BF01706497

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  • DOI: https://doi.org/10.1007/BF01706497

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