Abstract
Size and size distribution of the semiconductor nanocrystals embedded in a dielectric matrix play a dominant role in line broadening and the exciton quantum confinement level. The results show new aspects of the CdS and CdSe crystal growth as quantum dots using small angle neutron scattering techniques (SANS). Thus, the crystal growth influences the aggregation process of the silica network. The intensity difference of the scattering between the silica matrix and the composite accounts for the crystal size and their volume fraction. Under similar conditions CdS nanocrystals grow faster and bigger than CdSe ones.
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De La Rosa-Fox, N., Santos, A., Piñero, M. et al. SANS Study of CdS and CdSe Quantum Dot Crystal Growth in a Silica Matrix by Sol-Gel. Journal of Sol-Gel Science and Technology 13, 629–633 (1998). https://doi.org/10.1023/A:1008611814985
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DOI: https://doi.org/10.1023/A:1008611814985