Abstract
A general theory for the electrical conductivity and the thermoelectric power of monocrystalline metallic thin films at low temperatures is presented. It avoids the use of relaxation times but is based on the exact transition probabilities and is valid for arbitrary anisotropic elastic scattering mechanisms and Fermi surfaces. The boundary conditions are formulated in terms of a reflection parameter that may depend on the wave vector of the incident electrons. It is shown that the Boltzmann equation can be reduced to a finite system of Fredholm integral equations in one variable which can be solved by standard methods. The limiting cases of rather thick and very thin films are investigated in detail.
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Mann, E., Seeger, A. Theory of electronic conduction in monocrystalline metallic thin films with lattice defects. Phys kondens Materie 9, 122–136 (1969). https://doi.org/10.1007/BF02422542
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DOI: https://doi.org/10.1007/BF02422542