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Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory

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Abstract

We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density.

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References

  1. I.G. Baek, M.S. Lee, S. Seo, M.J. Lee, D.H. Seo, D.-S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.-I. Chung, J.T. Moon, Tech. Dig.—Int. Electron Devices Meet. 2004, 587

  2. M.-J. Lee, S. Han, S.H. Jeon, B.H. Park, B.S. Kang, S.-E. Ahn, K.H. Kim, C.B. Lee, C.J. Kim, I.-K. Yoo, D. Seo, X.-S. Li, J.-B. Park, J.-H. Lee, Y. Park, Nano Lett. 9, 1476 (2009)

    Article  ADS  Google Scholar 

  3. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 98, 033715 (2005)

    Article  ADS  Google Scholar 

  4. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008)

    Article  Google Scholar 

  5. Y.C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 9, 1636 (2009)

    Article  ADS  Google Scholar 

  6. J.W. Seo, J.-W. Park, K.S. Lim, J.-H. Yang, S.J. Kang, Appl. Phys. Lett. 93, 223505 (2008)

    Article  ADS  Google Scholar 

  7. K.M. Kim, B.J. Choi, Y.C. Shin, S. Choi, C.S. Hwang, Appl. Phys. Lett. 91, 012907 (2007)

    Article  ADS  Google Scholar 

  8. K. Tsunoda, Y. Fukuzumi, J.R. Jameson, Z. Wang, P.B. Griffin, Y. Nishi, Appl. Phys. Lett. 90, 113501 (2007)

    Article  ADS  Google Scholar 

  9. D.S. Jeong, H. Schroeder, R. Waser, Electrochem. Solid-State Lett. 10, G51 (2007)

    Article  Google Scholar 

  10. K.M. Kim, B.J. Choi, C.S. Hwang, Appl. Phys. Lett. 90, 242906 (2007)

    Article  ADS  Google Scholar 

  11. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010)

    Article  ADS  Google Scholar 

  12. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richter, C. Hacker, D. Gundlach, IEEE Electron Device Lett. 30, 706 (2009)

    Article  ADS  Google Scholar 

  13. H.Y. Jeong, J.Y. Lee, M.-K. Ryu, S.-Y. Choi, Phys. Status Solidi 4, 28 (2010)

    Google Scholar 

  14. H.Y. Jeong, J.Y. Lee, S.-Y. Choi, J.W. Kim, Appl. Phys. Lett. 95, 162108 (2009)

    Article  ADS  Google Scholar 

  15. H.Y. Jeong, Y.I. Kim, J.Y. Lee, S.-Y. Choi, Nanotechnology 21, 115203 (2010)

    Article  ADS  Google Scholar 

  16. H.Y. Jeong, J.Y. Lee, S.-Y. Choi, Adv. Funct. Mater. 20, 3912 (2010)

    Article  Google Scholar 

  17. A. Rose, Phys. Rev. 97, 1538 (1955)

    Article  ADS  Google Scholar 

  18. A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, H. Adachi, Phys. Rev. B 70, 224403 (2004)

    Article  ADS  Google Scholar 

  19. D.S. Shang, Q. Wang, L.D. Chen, R. Dong, X.M. Li, W.Q. Zhang, Phys. Rev. B 73, 245427 (2006)

    Article  ADS  Google Scholar 

  20. Y. Xia, W. He, L. Chen, X. Meng, Z. Liu, Appl. Phys. Lett. 90, 022907 (2007)

    Article  ADS  Google Scholar 

  21. S.K. Kim, G.-J. Choi, S.Y. Lee, M. Seo, S.W. Lee, J.H. Han, H.-S. Ahn, S. Han, C.S. Hwang, Adv. Mater. 20, 1429 (2008)

    Article  Google Scholar 

  22. S.-L. Li, D.S. Shang, J. Li, J.L. Gang, D.N. Zheng, J. Appl. Phys. 105, 033710 (2009)

    Article  ADS  Google Scholar 

  23. K. Shono, H. Kawano, T. Yokota, M. Gomi, Appl. Phys. Express 1, 055002 (2008)

    Article  ADS  Google Scholar 

  24. R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, D. Rinerson, in Proc. IEEE Non-Volatile Memory Technology Symp. (2008), p. 1

    Chapter  Google Scholar 

  25. W. Shen, R. Dittmann, U. Breuer, R. Waser, Appl. Phys. Lett. 93, 222102 (2008)

    Article  ADS  Google Scholar 

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Author notes

  1. Hu Young Jeong

    Present address: Graduate School of EEWS, KAIST, Daejeon, 305-701, South Korea

Authors and Affiliations

  1. Department of Materials Science and Engineering, KAIST, Daejeon, 305-701, South Korea

    Hu Young Jeong, Sung Kyu Kim & Jeong Yong Lee

  2. Electronics and Telecommunications Research Institute (ETRI), Daejeon, 305-700, South Korea

    Sung-Yool Choi

Authors
  1. Hu Young Jeong
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  2. Sung Kyu Kim
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  3. Jeong Yong Lee
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Correspondence to Sung-Yool Choi.

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Jeong, H.Y., Kim, S.K., Lee, J.Y. et al. Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory. Appl. Phys. A 102, 967–972 (2011). https://doi.org/10.1007/s00339-011-6278-3

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  • DOI: https://doi.org/10.1007/s00339-011-6278-3

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