Abstract
Silicon MOS structures with an SiO2−Si3N4 insulator were exposed to X-rays. Positive oxide charges arise and the continuous density of fast states increases at the Si−SiO2 interface. In addition, a single energy state develops above the middle of the energy gap atE−E v=600 meV. Annealing measurements in dry air and H2 lead to the conclusion that the single energy level originates from a dissociated hydrogen bond in the silicon dioxide.
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Voland, G., Pagnia, H. Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structures. Appl. Phys. 3, 77–80 (1974). https://doi.org/10.1007/BF00892337
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DOI: https://doi.org/10.1007/BF00892337