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Title:	Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
Source:	Journal of Crystal Growth [0022-0248] Allerman, A A yr:2004

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description	1.	Khan, A. "Ultraviolet light-emitting diodes based on group three nitrides." Nature Photonics 2.2 (2008): 77-84.
description	2.	Mitchell, C. "GaN to AIN: Materials for deep-UV emitters." 2003. 874-875.
description	3.	Sun, W. "Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power." Applied physics letters 96.6 (2010): 61102-61102.
description	4.	Valenti, M. "Lighting the way to improved disinfection." Mechanical engineering 119.7 (1997): 82-86.
description	5.	Taniyasu, Y. "An aluminium nitride light-emitting diode with a wavelength of 210 nanometres." Nature 441.7091 (2006): 325-328.
description	6.	Islam, M. "280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region." Applied physics express 2.10 (2009): 102101-102101.
description	7.	Gaska, R. "Deep-Ultraviolet Light-Emitting Diodes." IEEE transactions on electron devices 57.1 (2010): 12-25.
description	8.	Lin, T. "The effect and mechanism of UV disinfection on the inactivation of a planktonic freshwater copepods (Limnoithona sinensis)." Clean 42.1 (2013): 43-4.
description	9.	Hirayama, H. "226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire." Physica status solidi. C, Current topics in solid state physics 5.9 (2008): 2969-71.
description	10.	Yoshida, H. "Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode." Applied physics letters 93.24 (2008): 241106-241106.
description	11.	Li, J. "High performance Schottky UV photodetectors based on epitaxial AlGaN thin film." Physica. B, Condensed matter 405.3 (2010): 996-998.
description	12.	Follstaedt, D. "Strain relaxation in AlGaN multilayer structures by inclined dislocations." Journal of applied physics 105.8 (2009): 83507-83507.
description	13.	Koley, G. "Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures." Japanese journal of applied physics. Part 1, Regular papers & short notes 44.42-45 (2005).
description	14.	Karpov, S. "Dislocation effect on light emission efficiency in gallium nitride." Applied physics letters 81.25 (2002): 4721-4723.
description	15.	Walukiewicz, W. "Structure and electronic properties of InN and In-rich group III-nitride alloys." Journal of physics. D, applied physics 39.5 (2006).
description	16.	Orton, J.W. W. "Group III nitride semiconductors for short wavelength light-emitting devices." Reports on progress in physics 61.1 (1998): 1-75.
description	17.	Khan, M. "AlGaN multiple quantum well based deep UV LEDs and their applications." Physica status solidi. A, Applied research 203.7 (2006): 1764-1770.
description	18.	Wang, H. "AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire." Applied physics letters 81.4 (2002): 604-606.
description	19.	Nam, Chang-Yong Y. "Diameter-dependent electromechanical properties of GaN nanowires." Nano letters 6.2 (2006): 153-158.
description	20.	YAM, F. "Innovative advances in LED technology." Microelectronics journal 36.2 (2005): 129-137.