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Title:
Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si
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Semiconductor Science and Technology [0268-1242] Hartmann, J M yr:2009
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Hartmann, J M
Abbadie, A
Cherkashin, N
Grampeix, H
Clavelier, L
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Hartmann, J M
Abbadie, A
Cherkashin, N
Grampeix, H
Clavelier, L
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Hartmann, J M
Abbadie, A
Cherkashin, N
Grampeix, H
Clavelier, L
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