Temperature-dependent interface reactions and electrical contact properties of titanium on 6H-SiC

Unintentional interference patterns appeared in the four secondary electron images in this paper. The figures should appear as on this page.

Figure 2. A secondary electron image of a cross sectioned reaction zone between SiC and Ti annealed at 1200°C for 24 h. The ternary phase τ is T1₃SiC₂.

 1200°C

Figure 4. A secondary electron image of a cross sectioned reaction zone between SiC and Ti annealed at 1000°C for 144 h. The ternary phase τ is T1₃SiC₂.

 τ

Figure 5. A secondary electron image of a cross sectioned reaction zone between SiC and Ti annealed at 850°C for 1032 h. The ternary phase τ is T1₃SiC₂.

 T1₃SiC₂

Figure 7. A secondary electron image of a cross sectioned reaction zone between SiC and Ti annealed at 700°C for 1704 h.