Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

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, , Citation P Sakalas et al 2001 Semicond. Sci. Technol. 16 14 DOI 10.1088/0268-1242/16/1/303

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Author affiliations

1 Department of Microelectronics, Chalmers University of Technology, S-41296, Ranvägen 6, Gothenburg, Sweden

2 Fluctuation Phenomena Laboratory, Semiconductors Physics Institute, Gostauto 11, Vilnius 2600, Lithuania

3 Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Gothenburg University, S-41296 Gothenburg, Sweden

Dates

  1. Received 10 April 2000
  2. Accepted 25 October 2000

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0268-1242/16/1/14

Abstract

We report on the microwave noise measurements in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors. Noise parameters Fmin , RN and Gopt were measured and simulated in a broadband frequency range (2-26 GHz). Small-signal equivalent circuit and noise model parameters for different biases were extracted.

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10.1088/0268-1242/16/1/303