SFX by Ex Libris Inc.

Users interested in this article also expressed an interest in the following:
description	1.	Dupas, C. "Dislocation multiplication, exhaustion and mechanical behaviour for Ge single crystals." Journal of physics. Condensed matter 2002. 12989-12995.
description	2.	Sun, S. "Surface termination and roughness of Ge (100) cleaned by HF and HCl solutions." Applied physics letters 88.2 (2006): 21903-1.
description	3.	Liu, Z. "Preparation of clean GaAs(100) studied by synchrotron radiation photoemission." Journal of vacuum science & technology. A, An international journal devoted to vacuum, surfaces, and films 21.1 (2003): 212-218.
description	4.	DEVELYN, M. "ADSORPTION, DESORPTION, AND DECOMPOSITION OF HCL AND HBR ON GE(100) - COMPETITIVE PAIRING AND NEAR-FIRST-ORDER DESORPTION-KINETICS." The Journal of chemical physics 101.3 (1994): 2463-2475.
description	5.	Okumura, H. "Carbon contamination free Ge(100) surface cleaning for MBE." Applied surface science 125.1 (1998): 125-128.
description	6.	LYDING, J. "NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE." Applied physics letters 64.15 (1994): 2010-2012.
description	7.	Pan, M. "Modification of band offsets by a ZnSe intralayer at the Si/Ge (111) interface." Applied physics letters 72.21 (1998): 2707-2709.

Select All Clear All Save Citations

Journal of Physics - Condensed Matter [0953-8984] Schr ter, Wolfgang yr:2002