ExLibris header image
SFX Logo
Title: High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods
Source:

Journal of Physics D-Applied Physics [0022-3727] Meduna, M yr:2005


Collapse list of basic services Basic
Full text
Full text available via EZB-NALIM-00482 IOP Archive NL
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Aubertine, D. "Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures." Journal of applied physics 97.1 (2005): 13531-1. Link to SFX for this item
2. Mander, M. "Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers." Journal of applied physics 92.9 (2002): 5027-5035. Link to SFX for this item
3. Thompson, S. "Uniaxial-process-induced Strained-Si: Extending the CMOS roadmap." IEEE transactions on electron devices 53.5 (2006): 1010-1020. Link to SFX for this item
4. Benedetti, A. "Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods." Journal of applied physics 93.7 (2003): 3893-3899. Link to SFX for this item
5. Bernstein, K. "High-performance CMOS variability in the 65-nm regime and beyond." IBM Journal of Research and Development 50.4/5 (2006): 433-449. Link to SFX for this item
6. Meduna, M. "Interface roughness in SiGe quantum-cascade structures from x-ray reflectivity studies." Journal of applied physics 91.11 (2002): 8974-8978. Link to SFX for this item
7. Smith, L. "Exploring the limits of stress-enhanced hole mobility." IEEE electron device letters 26.9 (2005): 652-654. Link to Full Text for this item Link to SFX for this item
8. Belford, R. "Uniaxial, tensile-strained Si devices." Journal of electronic materials (2001): 807-811. Link to Full Text for this item Link to SFX for this item
9. Thompson, S. "A 90-nm logic technology featuring strained-silicon." IEEE transactions on electron devices 51.11 (2004): 1790-1797. Link to SFX for this item
10. Thompson, S. "In search of "Forever," continued transistor scaling one new material at a time." IEEE transactions on semiconductor manufacturing 18.1 (2005): 26-36. Link to Full Text for this item Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.