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Title:
Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach
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Journal of Physics D-Applied Physics [0022-3727] Zhu, C Y yr:2008
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Zhu, C Y
Ling, C C
Brauer, G
Anwand, W
Skorupa, W
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Ling, C C
Brauer, G
Anwand, W
Skorupa, W
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Ling, C C
Brauer, G
Anwand, W
Skorupa, W
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