Abstract
A combination of scanning tunneling luminescence (STL) and current-voltage scanning tunneling spectroscopy (STS) has been employed to image the charge density of the confined electronic states and to spatially resolve the extent of the orbitals of InGaAs quantum dots produced by epitaxial Stranski–Krastanow growth. The selective investigation of isolated dots and coupled dots (dot-to-dot distance of the order of few nm) clearly reveals the formation of atomic-like and molecular-like states. The tunneling current images have been compared with calculated tunneling current profiles and the observed tunneling current contrast has been associated with the localized quantum dot states.
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