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Differential Mode Conducted EMI Prediction in Three Phase SiC Inverters

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Published under licence by IOP Publishing Ltd
, , Citation Zhuolin Duan et al 2017 IOP Conf. Ser.: Mater. Sci. Eng. 199 012126 DOI 10.1088/1757-899X/199/1/012126

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fantao@mail.iee.ac.cn

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1 University of Chinese Academy of Sciences, Beijing, China

2 Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China

3 Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China

4 Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing, China

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1757-899X/199/1/012126

Abstract

With the application of Silicon carbide (SiC) power MOSFETs in three phase inverters, higher level electromagnetic interference (EMI) produced. Thus, it is more urgent to predict EMI level in the design phase. This paper describes a frequency-domain approach to predict differential mode(DM) EMI of three phase SiC inverters. Both noise path and DM noise source are modeled. The calculated result is compared with experimental result and they agree well with each other. It is indicated that the proposed method with accurate noise and path modeling is an effective method for DM prediction of the system.

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10.1088/1757-899X/199/1/012126